rating report. types md#810-12n1 to md#810-18n1 issue 1 page 1 of 9 may, 2008 ixys date: 2 may 2008 data sheet issue: 1 dual diode modules md#810-12n1-18n1 absolute maximum ratings v rrm v drm [v] mdd mda mdk 1200 810-12n1 810-12n1 810-12n1 1400 810-14n1 810-14n1 810-14n1 1600 810-16n1 810-16n1 810-16n1 1800 810-18n1 810-18n1 810-18n1 voltage ratings maximum limits units v drm repetitive peak off-state voltage 1) 1200-1800 v v dsm non-repetitive peak off-state voltage 1) 1300-1900 v v rrm repetitive peak reverse voltage 1) 1200-1800 v v rsm non-repetitive peak reverse voltage 1) 1300-1900 v other ratings maximum limits units i f(av)m maximum average on-state current, t c = 85c 2) 807 a i f(av)m maximum average on-state current. t c = 100c 2) 664 a i f(rms)m nominal rms on-state current, t c = 55c 2) 1661 a i f(d.c.) d.c. on-state current, t c = 55c 1342 a i fsm peak non-repetitive surge t p = 10 ms, v rm = 60%v rrm 3) 17.3 ka i fsm2 peak non-repetitive surge t p = 10 ms, v rm 10v 3) 19 ka i 2 ti 2 t capacity for fusing t p = 10 ms, v rm = 60%v rrm 3) 1.4810 6 a 2 s i 2 t i 2 t capacity for fusing t p = 10 ms, v rm 10 v 3) 1.8110 6 a 2 s v isol isolation voltage 4) 3000 v t vj op operating temperature range -40 to +150 c t stg storage temperature range -40 to +150 c notes: 1) de-rating factor of 0.13% per c is applicable for tv j below 25c. 2) single phase; 50 hz, 180 half-sinewave. 3) half-sinewave, 150c t vj initial. 4) ac rms voltage, 50 hz, 1min test
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 2 of 9 may, 2008 characteristics parameter min. typ. max. test conditions 1) units v fm maximum peak on-state voltage - - 1.24 i fm = 2000 a v v t0 threshold voltage - - 0.78 v r t slope resistance - - 0.23 m ? i rrm peak reverse current - - 50 rated v rrm ma q rr recovered charge - 1250 1400 c q ra recovered charge, 50% chord - 1000 - c i rm reverse recovery current - 115 - a t rr reverse recovery time, 50% chord - 16.5 - i tm = 1260 a, t p =1ms, di/dt =10a/s, v r =100 v s -- 0.062 single thyristor k/w r thjc thermal resistance, junction to case -- 0.031 whole module k/w -- 0.02 single thyristor k/w r thch thermal resistance, case to heatsink -- 0.01 whole module k/w f 1 mounting force (to heatsink) 2) 5.1 - 6.9 nm f 2 mounting force (to terminals) 2) 10.8 - 13.2 nm w t weight - 1.5 - kg notes: 1) unless otherwise indicated t vj =150c. 2) screws must be lubricated.
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 3 of 9 may, 2008 notes on ratings and characteristics 1.0 voltage grade table voltage grade v rrm v v rsm v v r dc v 1200 1200 1300 900 1400 1400 1500 1050 1600 1600 1700 1200 1800 1800 1900 1350 2.0 extension of voltage grades this report is applicable to other voltage grades when supply has been agreed by sales/production. 3.0 de-rating factor a blocking voltage de-rating factor of 0.13%/c is applicable to this device for t vj below 25c. 4.0 snubber components when selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. if required, please consult the factory for assistance. 5.0 computer modelling parameters 5.1 thyristor dissipation calculations t av t t t av r ff w r ff v v i ? ? ? ? ? + + ? = 2 2 2 0 0 2 4 and: k j th av t t t r t w ? = ? ? = max where v t0 = 0.78 v, r t = 0.23 m ? . r th = supplementary thermal impedance, see table below and ff = form factor, see table below. supplementary thermal impedance conduction angle 30 60 90 120 180 270 d.c. square wave 0.0702 0.0685 0.0679 0.0668 0.0658 0.0637 0.0620 sine wave 0.0677 0.0673 0.0664 0.0655 0.0650 form factors conduction angle 30 60 90 120 180 270 d.c. square wave 3.464 2.449 2 1.732 1.414 1.149 1 sine wave 3.98 2.778 2.22 1.879 1.57
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 4 of 9 may, 2008 5.2 calculating thyristor v f using abcd coefficients the on-state characteristic i f vs. v f , on page 6 is represented by a set of constants a, b, c, d, forming the coefficients of the representative equation for v f in terms of i f given below: () f f f f i d i c i b a v ? + ? + ? + = ln the constants, derived by curve fitting software, are given below for both hot and cold characteristics. the resulting values for v f agree with the true device characteristic over a current range, which is limited to that plotted. 25c coefficients 150c coefficients a 1.007759 a 0.4900846 b 6.648416e -3 b 0.04757313 c 1.01095e -4 c 2.158905e -4 d 3.204619e -3 d -1.076607e -3
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 5 of 9 may, 2008 5.3 d.c. thermal impedance calculation = = ? ? ? ? ? ? ? ? ? ? ? = n p p t p t p e r r 1 1 where p = 1 to n and: n = number of terms in the series t = duration of heating pulse in seconds r t = thermal resistance at time t r p = amplitude of p th term p = time constant of r th term the coefficients for this device are shown in the table below: d.c. term 12345 r p 1.3710 -3 4.8610 -3 0.0114 0.0223 0.0221 p 7.610 -4 8.610 -3 0.101 0.56 3.12 6.0 reverse recovery ratings (i) q ra is based on 50% i rm chord as shown in fig. 1 fig. 1 (ii) q rr is based on a 150 s integration time i.e. = s rr rr dt i q 150 0 . (iii) 2 1 t t factor k =
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 6 of 9 may, 2008 curves figure 1 ? on-state characteristics of limit device 100 1000 10000 0 0.5 1 1.5 2 2.5 instantaneous forward voltage - v fm (v) instantaneous forward current - i fm (a) t j = 150c t j = 25c figure 2 ? maximum surge and i 2 t ratings 1000 10000 100000 total peak half sine surge current (a) 1.00e+05 1.00e+06 1.00e+07 maximum i 2 t (a 2 s) 13 510 1 5 10 50 100 duration of surge (ms) duration of surge (cycles @ 50hz) i 2 t: 60% v rrm i tsm : 60% v rrm i 2 t: v rrm 10v i tsm : v rrm 10v t j (initial) = 150c gate may temporarily lose control of conduction angle md#810-12n1-18n1 issue 1 md#810-12n1-18n1 issue 1
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 7 of 9 may, 2008 figure 3 - total recovered charge, q rr figure 4 - recovered charge, q ra (50% chord) 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q rr (c) t j =150c 2520a 630a 1260a 1890a 100 1000 10000 1 10 100 1000 di/dt (a/s) recovered charge - q ra , 50% chord (c) t j =150c 2520a 1890a 630a 1260a figure 5 - peak reverse recovery current, i rm figure 6 - maximum recovery time, t rr (50% chord) 10 100 1000 1 10 100 1000 di/dt (a/s) reverse recovery current - i rm (a) t j =150c 2520a 1890a 1260a 630a 1 10 100 1 10 100 1000 di/dt (a/s) reverse recovery time (50% chord) - t rr (s) t j =150c 2520a 1890a 1260a 630a md#810-12n1-18n1 issue 1 md#810-12n1-18n1 issue 1 md#810-12n1-18n1 issue 1 md#810-12n1-18n1 issue 1
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 8 of 9 may, 2008 figure 7 ? on-state current vs. power dissipation figure 8 ? on-state current vs. heatsink temperature 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 mean forward current (a) (whole cycle averaged) maximum forward dissipation (w) 6? 3? ? wave d.c. 0 20 40 60 80 100 120 140 160 0 500 1000 1500 2000 mean forward current (a) (whole cycle averaged) maximum permissible heatsink temperature (c) 6? 3? ? wave d.c. figure 9 ? transient thermal impedance 0.00001 0.0001 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 time (s) thermal impedance (k/w) sin g le th y ristor md#810-12n1-18n1 issue 1 md#810-12n1-18n1 issue 1 md#810-12n1-18n1 issue 1
ixys dual diode module types md#810-12n1 to md#810-18n1 rating report. types md#810-12n1 to md#810-18n1 issue 1 page 9 of 9 may, 2008 outline drawing & ordering information 150a118 ordering information (please quote 11 digit code as below) m d# 810 n1 fixed type code configuration code dd, da, dk fixed type code voltage code v rrm /100 12-18 standard diode fixed version code typical order code: mda810-16n1? mda configuration, 1600v v rrm ixys ixys semiconductor gmbh edisonstra?e 15 d-68623 lampertheim tel: +49 6206 503-0 fax: +49 6206 503-627 e-mail: marcom@ixys.de www.ixys.com westcode semiconductors ltd langley park way, langley park, chippenham, wiltshire, sn15 1ge. tel: +44 (0)1249 444524 fax: +44 (0)1249 659448 e-mail: wsl.sales@westcode.com westcode an ixys company ixys corporation 1590 buckeye drive milpitas, ca 95035-7418 usa tel: +1 (408) 457 9000 fax: +1 (408) 496-0670 e-mail: sales@ixys.net www.westc ode.com ixys long beach 3270 cherry avenue long beach ca 90807 usa tel: +1 (562) 595 6971 fax: +1 (562) 595 8182 e-mail: wsi.sales@westcode.com the information contained herein is confidential and is protected by copyright. the information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors i xys semic onductors gmbh. in the interest of product improvement, i xys reserves the right to c hange specifications at any time without prior notice. ? ixys semic onductor gmbh. 31 2 mdd 31 2 mdk 31 2 mda
|
